Method of planarizing a semiconductor die

ABSTRACT

A method of CMP planarizing a silicon dioxide layer on a silicon nitride in the semiconductor die is disclosed. A wafer has a plurality substantially identical semiconductor dies defined on the wafer. Each of the dies is separated from one another by a scribe line. A layer of silicon nitride is formed on the planar surface of the wafer where the silicon nitride has a top surface which is substantially parallel to the planar surface. A layer of silicon dioxide is deposited on the top surface with the silicon dioxide varying in height above the top surface. A mask is formed across the wafer, including on the scribe line, where the mask has a plurality of locations with each location having a differing density of gap-to-pillar ratio, which is proportional to the height of the silicon dioxide above the top surface. The silicon dioxide is anisotropically etched through each gap of the mask across the entire wafer where each gap is etched by the same amount in the height direction. CMP is then used to planarize the silicon dioxide to the top surface of the silicon nitride across the entire wafer.

[0001] The present application claims the priority of a ProvisionalApplication 60/422,314 filed on Oct. 29, 2002, whose disclosure isincorporated herein by reference in its entirety.

TECHNICAL FIELD

[0002] The present invention relates to a method of planarizing a layerof a first material, and more particularly a dieletric layer, usingchemical mechanical polishing techniques on a semiconductor die.

BACKGROUND OF THE INVENTION

[0003] Chemical mechanical polishing (CMP) is a well-known method toplanarize a material used in semiconductor processing. Typically, thematerial to be planarized is a dieletric, such as silicon dioxide, whichhas been deposited on another dieletric such as silicon nitride.Further, the silicon nitride has a top planar surface with the silicondioxide deposited thereon. However, because there are trenches in thesubstrate and with holes in the silicon nitride leading to the trenches,the silicon dioxide deposited on the silicon nitride will flow throughthe holes in the silicon nitride into the trenches in the substrate,thereby causing an uneven level above the top planar surface of thesilicon nitride. Thus, the height of the silicon dioxide above the topplanar surface of the silicon nitride can vary substantially. In the CMPmethod, it is desired to polish or remove the silicon dioxide so that itis planar with the top planar surface of the silicon nitride.

[0004] One prior art method to attempt to level the silicon dioxide isto create artificial dummy diffusion regions in the substrate of largefield areas and filling it with oxide, but this does not address thelarge active areas and CMP's dishing effect associated with the largeactive areas. In other words, this method alone does not address theproblem of the planarization of all the areas of the wafer. Anotherprior art solution is to mask certain portions of the silicon dioxidewhere the height of the silicon dioxide above the top planar surface ofthe silicon nitride is substantial. The silicon dioxide in the maskedportion is removed thereby removing a substantial portion of the silicondioxide in the portion where the height of the silicon dioxide above thetop planar surface is substantial. This, however, creates a well-knownundesired effect called “dishing” wherein polishing of the silicondioxide causes the removal of silicon nitride in certain areas.

[0005] Finally, in an article entitled “Using Smart Dummy Fill andSelective Reverse Etch Back for Pattern Density Equalization,” by BrianLee, Duane S. Boning, Dale L. Hetherington, and David J. Stein,published in CMP-MIC conference dated March, 2000, the authors suggesteda dummy mask with a certain lay out density patterns and then removingsilicon dioxide from just those selected etch back cells wherein acertain percentage of the underlying silicon dioxide is removed and isinverse to that of the targeted film density. This technique, however,suffers from the disadvantage that it does not take into account silicondioxide across the entire wafer of semiconductor substrate, includingsilicon dioxide between the scribe lines separating the dies.

SUMMARY OF THE INVENTION

[0006] Accordingly, in the present invention, a method of planarizing afirst material on a second material of a semiconductor die is disclosed.A plurality of substantially identical semiconductor dies are defined ona semiconductor wafer with the wafer having a planar surface. Theplurality of dies are separated from one another by a scribe line. Alayer of the second material is formed on the planar surface of thesemiconductor wafer, wherein the layer of the second material has a topsurface which is substantially parallel to the planar surface. A layerof the first material is on the top surface and the layer of the firstmaterial varies in a height direction above the top surface. A mask isformed across the wafer, where the mask has a plurality of locationswith each location having differing density of gap-to-pillar ratio,which is proportional to the height of the first material above the topsurface. The first material is anisotropically etched through each gapof the mask across the entire wafer wherein each gap is etched by thesame amount in the height direction. CMP is then used to planarize thefirst material to the top surface across the wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007]FIG. 1 is a top view of a wafer having a plurality ofsubstantially identical semiconductor dies defined thereon and having afirst material thereon to be planarized in accordance with the method ofthe present invention.

[0008]FIG. 2 is a partial cross-sectional view of one semiconductor dieshown in FIG. 1 of an exemplar profile of the silicon dioxide which isgrown on silicon nitride and is desired to be planarized.

[0009]FIG. 3A is a top view of one method of the present invention usinga mask in which a field has a plurality of pillars with different sizesbut with the gaps between adjacent pillars all being the same size.

[0010]FIG. 3B is a cross-sectional view of the mask pattern using themask shown in FIG. 3A on the structure shown in FIG. 2.

[0011]FIG. 3C is a cross-sectional view of the structure shown in FIG.3B after the mask has been applied and etched.

[0012]FIG. 4A is a top view of another method of the present inventionusing a mask in which a field has a plurality of pillars with the samesize but with the gaps between adjacent pillars all being different.

[0013]FIG. 4B is a cross-sectional view of the mask pattern using themask shown in FIG. 4A on the structure shown in FIG. 2.

[0014]FIG. 4C is a cross-sectional view of the structure shown in FIG.4B after the mask has been applied and etched.

DETAILED DESCRIPTION OF THE INVENTION

[0015] Referring to FIG. 1, there is shown a top view of a wafer 10 of asemiconductor substrate. Typically, the semiconductor substrate 10 issingle crystalline silicon or it may be a composite semiconductor, suchas a III-V material. The wafer 10 has defined thereon a plurality ofsubstantially identical semiconductor dies 12, with each die 12separated from one another by a scribe line 14. The wafer 10 ischaracterized by having a substantially planar top surface 16. In themethod of the present invention, as well as in the prior art, a thinlayer 20 of silicon dioxide is deposited or thermally grown on this topsurface 16 of the substrate 10. The layer 20 of silicon dioxide can be,although not necessarily, used as the gate oxide for MOS transistors andthe like. Deposited on the first layer 20 of silicon dioxide is a layer22 of silicon nitride. The silicon nitride has a planar surface 24,which is substantially parallel to the top surface 16 of thesemiconductor substrate 10.

[0016] Typically, trenches 26(a-c) are etched into the silicon nitride22 and through the silicon dioxide 20 and into the silicon substrate 10.Finally, a layer of silicon dioxide 28 fills the trenches 26(a-c) and isalso deposited on top of the planar surface 24 on the silicon nitride22. In one embodiment, the layer 28 of silicon dioxide is deposited byHDP (high density plasma) deposition. The silicon dioxide 28 isdeposited on the planar surface 24 of the silicon nitride 22 and intothe trenches 26(a-c) but does not form a planar surface which isparallel to the planar surface 24. Instead, because the silicon dioxide28 “fills” the trenches 26, the thickness of the silicon dioxide 28above the planar surface 24 of the silicon nitride 22 will vary. Anexemplary cross-sectional view of a die 12 is shown in FIG. 2. In themethod of the present invention, it is desired to planarize the silicondioxide 28 such that the resultant structure would be planar and wouldalign with the top planar surface 24 of the silicon nitride 22. Itshould be noted that the layer 20 of silicon dioxide, layer 22 ofsilicon nitride, and layer 28 of silicon nitride is applied across theentire wafer 10, including over the scribe lines 14. Of course, as canbe seen by the trenches 26 in FIG. 2, this does not mean that layers 20and 22 are everywhere on the top surface 16 of the substrate 10.

[0017] There are two methods to planarize the silicon dioxide 28. In thefirst method, as shown in FIG. 3A, a mask is first applied to thecontour of the silicon dioxide 28. The mask comprises a plurality ofsubstantially identical fields 30, which are shown in FIG. 3A. Each ofthe fields 30 is substantially identical or congruent. Within a field30, there are pillars 32 and gaps. A pillar 32 is a cross-sectional areaand in the preferred embodiment, it is substantially square in shape. Agap is defined as the distance from the center of a pillar 32 to thecenter of an adjacent pillar 32. Thus, as shown in FIG. 3A, althoughthere are different sized pillars 32, the gap distance X is the same foreach of the three fields 30 shown in FIG. 3A. Thus, in the first methodof the present invention, a mask is formed comprising of a plurality ofcongruent fields 30, each having one or more pillars 32 that havedifferent sizes, but with gaps all of the same size. The size of eachpillar, i.e., the cross-sectional dimension of the pillar 32, isdependent upon the thickness of the silicon dioxide 28 above the planarsurface 24 upon which the fields 30 are placed. Thus, as shown in FIG.3B, the structure therein has two regions designated “A” and “B.”

[0018] In the region designated “A,” the thickness or the amount ofsilicon dioxide 28 which is on the planar surface 24 of the siliconnitride 22, is substantially less than the thickness of the silicondioxide 28 in the region designated “B.” This variation in the thicknessof the silicon dioxide 28 would cause an inverse variation in thedensity of pillar-to-gap ratio that is formed on the silicon dioxide 28.In particular, where the thickness is small, as in region A, the densityof pillar-to-gap ratio is large in comparison to region B, where thethickness of the silicon dioxide 28 is large and density ofpillar-to-gap ratio is small.

[0019] To determine the thickness of the silicon dioxide 28 or thematerial to be planarized in each different regions and therefore tocreate the necessary mask with its appropriate pillar size but withconstant gap size, one can perform the determination in one of two ways.First, the thickness at each region can be calculated based upon theanticipated thickness due to the number of trenches in the selectedregion. For example, since in region A there are two trenches 26 a and26 b, whose depths are known, it can be calculated what the ultimatethickness of the silicon dioxide 28 in region A would be due to aportion of the silicon dioxide 28 in that region A used to fill thetrenches 26 a and 26 b, thereby lowering the height of the silicondioxide 28 in region A. Similarly, for region B, the calculations can bemade based upon the size of the trench 26 c and the volume of silicondioxide which would flow to fill the trench 26 c thereby lowering theheight of the silicon dioxide 28 in that region. Thus, a computer can beused to calculate the height or thickness of the silicon dioxide 28 invarious regions and therefore to calculate the density of thepillar-to-gap ratio in those regions. The computer must know theinformation of the pattern layout on the mask used to etch the trenchesas well as the depth of the trench plus the thickness of the layers 20and 22.

[0020] Alternatively, this can be found empirically by examining the SEM(scanning electron microscope) view of the cross-sectional area afterthe deposition of the layer 28 for a select die. Once that is known, thelayout of the fields 30 necessary to be produced with the appropriatedensity for that process can be determined. There will be severaldifferent pillar layout patterns corresponding to the density of thepillars needed after the anisotropic etch.

[0021] Based upon either of these methods, after a mask with theplurality of fields 30 is applied on the entire wafer, including overthe scribe line 14 (with the resultant structure of a portion of the dieshown in FIG. 3B), an anisotropic etch is performed. The silicon dioxide28 between gaps which are the regions between adjacent pillars 32 whichare formed on the contour of the silicon dioxide 28 is anisotropicallyetched. Each gap is etched into the silicon dioxide 28 by the samethickness amount Y. The resultant structure is shown in FIG. 3C.

[0022] Finally, the wafer 10 with the structure shown in FIG. 3C is thensubject to a conventional CMP polishing method. As a result, after theCMP processing of the wafer 10 with the structure shown in FIG. 3C, thesilicon dioxide 28 would reach the planar surface 24 of the structure.

[0023] Referring to FIG. 4A, there is shown another method of thepresent invention. In the second method of the present invention, again,the fields 30 are congruent and of the same size. However, one or morepillars 32 of the same size are formed in each field 30, with the gapbetween each pillar being different. The density of the pillar 30 to thegap would depend upon the “height” of the silicon dioxide 28 upon whichthe fields are fixed, plus the thickness of layers 20 and 22. Again, amask in which the fields 30 are placed on the contour of the silicondioxide 28 is formed, resulting in the formation of a number of regionsin which within each region the fields are congruent but thepillar-to-gap ratio differs.

[0024] Similar to the foregoing explanation with regard to theprocessing for the structure shown in FIG. 3B, after the fields 30 areformed on the contour of the silicon dioxide 28, the silicon dioxide 28between adjacent pillars or in the gaps are anisotropically etched. Onceagain, similar to the process described above with regard to FIG. 3C,the silicon dioxide 28 is anisotropically etched by the same amount Y inthe “height” direction, resulting in the structure shown in FIG. 4C. Thestructure shown in FIG. 4C is then CMP polished and the resultantstructure would be the silicon dioxide 28 being substantially planar tothe planar surface 24 of the silicon nitride 22.

[0025] The theory of the present invention is as follows. When a maskwhose pillar-to-gap density ratio is inversely proportional to the“height” of the silicon dioxide 26 is applied, a subsequent CMPpolishing step would cause those fields that have low density to be etchor polished faster than those fields having high density. The fieldshaving low density represent those fields that are over portions of thesilicon dioxide that are thick. Therefore, those regions will be etchedfaster than the regions where the silicon dioxide is ‘thin”. Furtherpolishing eventually brings both portions into the same planar field.

[0026] Mathematically, this may be expressed as follows: The etch ratein a CMP process having a certain topography with density D is R/D,where R is the etch rate of a flat surface. The density D is equal tothe total area of high feature (total area of pillars 32)/divided byTotal area (area of field) or (total area of pillars 32+total area ofgaps). Thus, density D will always be less than or equal to 1.0. If thedensity is low, i.e. there is less amount of pillars, then the etch ratewill be faster than if the density is high. Since density low representsthe density of the mask over the region of the silicon dioxide which isthicker than the region of the silicon dioxide that is thinner, thethicker regions will be etched faster.

[0027] Various specific embodiments can be formed without detractingfrom the spirit of the invention. In particular, the size of a field canbe of microscopic size, e.g. 50 um by 50 um.

What is claimed is:
 1. A method of chemical mechanical polishing (CMP) afirst material on a second material of a semiconductor die, said methodcomprising: defining a plurality of substantially identicalsemiconductor dies on a semiconductor wafer, said wafer having a planarsurface, and wherein said plurality of dies are separated from oneanother by a scribe line; forming a layer of said second material onsaid planar surface wherein said layer of said second material having atop surface, substantially parallel to said planar surface; forming alayer of said first material on said top surface, wherein said layer ofsaid first material varying in a height direction above said topsurface; forming a mask across the wafer, wherein said mask having aplurality of locations with each location having differing density ofgap to pillar ratio, which is proportional to the height of said firstmaterial above said top surface; anistropically etching said firstmaterial through each gap of said mask, across the wafer, wherein eachgap is etched by the same amount in the height direction; and using CMPto planarize said first material to said top surface across the wafer.2. The method of claim 1 wherein said layer of second material issilicon nitride, and wherein said layer of first material is silicondioxide.
 3. The method of claim 1 further comprising a layer of thirdmaterial between said layer of second material and said wafer.
 4. Themethod of claim 3 wherein said layer of second material is siliconnitride, and wherein said layer of first material and third material aresilicon dioxide.
 5. The method of claim 4 wherein said layer of secondmaterial has holes therein connecting said layer of first material andthird material.
 6. The method of claim 5 wherein each of said dies hastrenches therein filled with said layer of first material.
 7. The methodof claim 6 wherein said density of gap to pillar comprises a pluralityof substantially congruent fields with each field having the same sizepillar but different size gap.
 8. The method of claim 6 wherein saiddensity of gap to pillar comprises a plurality of substantiallycongruent fields with each field having different size pillar but samesize gap.
 9. The method of claim 1 wherein said density of gap to pillarcomprises a plurality of substantially congruent fields with each fieldhaving the same size pillar but different size gap.
 10. The method ofclaim 1 wherein said density of gap to pillar comprises a plurality ofsubstantially congruent fields with each field having different sizepillar but same size gap.
 11. A method of planarizing a first materialon a second material of a semiconductor die, said method comprising:defining a plurality of substantially identical semiconductor dies on asemiconductor wafer, said wafer having a planar surface, and whereinsaid plurality of dies are separated from one another by a scribe line;forming a layer of a third material on said planar surface; forming alayer of said second material on said layer of third material, saidlayer of said second material having a top surface substantiallyparallel to said planar surface; masking selective portions of saidlayer of second material, with other portions of said layer of secondmaterial unmasked; etching said layer of second material, said layer offirst material, and said semiconductor wafer to form trenches therein,through said other portions unmasked; applying said layer of said firstmaterial on said wafer, including in said trenches and on said secondmaterial, wherein said layer of said first material varying in a heightdirection above said top surface; forming a mask across the wafer,wherein said mask having a plurality of locations with each locationhaving differing density of gap to pillar ratio which is proportional tothe amount of said first material in the height direction from said topsurface at said location; anistropically etching said first materialthrough each gap of said mask, across the wafer, wherein each gap isetched by the same amount in the height direction; and using CMP toplanarize said first material to said top surface across the wafer. 12.The method of claim 11, wherein said masking step further comprises:forming a mask covering select portions of said layer of second materialwith other portions unmasked; and removing said mask after said etchingstep.
 13. The method of claim 12 wherein said first material and saidthird material is silicon dioxide, and said second material is siliconnitride.
 14. The method of claim 12 wherein said density of gap topillar comprises a plurality of substantially congruent fields with eachfield having the same size pillar but different size gap.
 15. The methodof claim 12 wherein said density of gap to pillar comprises a pluralityof substantially congruent fields with each field having different sizepillar but same size gap.